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ZXMN2B14FH
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max. Unit Conditions
Static
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
V (BR)DSS
I DSS
I GSS
20
1
100
V
A
nA
I D = 250 A, V GS =0V
V DS = 20V, V GS =0V
V GS =±8V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state
V GS(th)
R DS(on)
0.4
1.0
0.055
V
I D = 250 A, V DS =V GS
V GS = 4.5V, I D = 3.5A
resistance (*)
0.075
0.100
V GS = 2.5V, I D = 3A
V GS = 1.8V, I D = 2.6A
Forward transconductance (*) (?)
g fs
11
S
V DS = 10V, I D = 3.5A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
872
145
90
pF
pF
pF
V DS = 10V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
3.7
5.2
30
5.5
11
1.4
2.1
ns
ns
ns
ns
nC
nC
nC
V DD = 10V, V GS = 4.5V
I D = 1A
R G ≈ 6.0
V DS = 10V, V GS = 4.5V
I D = 4.0A
Source-drain diode
Diode forward voltage (*)
V SD
0.69
0.95
V
T j =25°C, I S = 1.45A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
9.4
2.8
ns
nC
T j =25°C, I F = 2.4A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - March 2007
? Zetex Semiconductors plc 2007
4
www.zetex.com
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